US 11,683,934 B2
Nonvolatile memory device and method for fabricating the same
Young-Jin Jung, Hwaseong-si (KR); Bong Tae Park, Seoul (KR); and Ho Jun Seong, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd.
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 28, 2021, as Appl. No. 17/360,013.
Application 17/360,013 is a continuation of application No. 16/818,294, filed on Mar. 13, 2020, granted, now 11,081,499.
Claims priority of application No. 10-2019-0093632 (KR), filed on Aug. 1, 2019.
Prior Publication US 2021/0343740 A1, Nov. 4, 2021
Int. Cl. H01L 23/522 (2006.01); H01L 27/11582 (2017.01); H01L 27/11573 (2017.01); H01L 27/11565 (2017.01); H01L 27/11575 (2017.01); H01L 23/528 (2006.01)
CPC H01L 27/11582 (2013.01) [H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A nonvolatile memory device comprising:
a substrate;
a peripheral circuit structure on the substrate;
a mold structure comprising a plurality of insulating patterns and a plurality of gate electrodes stacked alternately on the peripheral circuit structure;
a channel structure penetrating the mold structure; and
a source structure comprising a first pattern and a second pattern in contact with an upper part of the channel structure and having a different material, on the mold structure,
wherein the channel structure comprises a first region connected to the first pattern and a second region connected to the second pattern.