CPC H01L 33/32 (2013.01) [H01L 33/06 (2013.01); H01L 33/40 (2013.01)] | 19 Claims |
1. A light emitting diode (LED) comprising:
(a) a first contact;
(b) a first semiconductor layer disposed over the first contact;
(c) a second semiconductor layer disposed over the first semiconductor layer, wherein the second semiconductor layer includes at least one hexagonal Boron Nitride quantum well and at least one hexagonal Boron Nitride quantum barrier;
(d) a third semiconductor layer disposed over the second semiconductor layer; and
(e) a second contact positioned over the third semiconductor layer.
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