US 11,682,749 B2
Semiconductor device and method of making the same
Tillmann Christoph Kubis, West Lafayette, IN (US)
Assigned to Purdue Research Foundation, West Lafayette, IN (US)
Filed by Purdue Research Foundation, West Lafayette, IN (US)
Filed on Oct. 19, 2021, as Appl. No. 17/505,477.
Application 17/505,477 is a division of application No. 16/718,482, filed on Dec. 18, 2019, granted, now 11,152,542.
Claims priority of provisional application 62/781,839, filed on Dec. 19, 2018.
Prior Publication US 2022/0149239 A1, May 12, 2022
Int. Cl. H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01)
CPC H01L 33/32 (2013.01) [H01L 33/06 (2013.01); H01L 33/40 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A light emitting diode (LED) comprising:
(a) a first contact;
(b) a first semiconductor layer disposed over the first contact;
(c) a second semiconductor layer disposed over the first semiconductor layer, wherein the second semiconductor layer includes at least one hexagonal Boron Nitride quantum well and at least one hexagonal Boron Nitride quantum barrier;
(d) a third semiconductor layer disposed over the second semiconductor layer; and
(e) a second contact positioned over the third semiconductor layer.