US 11,682,747 B2
Ultraviolet light emitting element and light emitting element package including the same
Youn Joon Sung, Gyeonggi-do (KR); Seung Kyu Oh, Gyeonggi-do (KR); Jae Bong So, Gyeonggi-do (KR); Gil Jun Lee, Gyeonggi-do (KR); Won Ho Kim, Gyeonggi-do (KR); Tae Wan Kwon, Seoul (KR); Eric Oh, Gyeonggi-do (KR); Il Gyun Choi, Gyeonggi-do (KR); and Jin Young Jung, Gyeonggi-do (KR)
Assigned to Photon Wave Co.. Ltd., Gyeonggi-do (KR)
Filed by Photon Wave Co., Ltd., Gyeonggi-do (KR)
Filed on Feb. 18, 2021, as Appl. No. 17/178,261.
Claims priority of application No. 10-2020-0113153 (KR), filed on Sep. 4, 2020; and application No. 10-2020-0123099 (KR), filed on Sep. 23, 2020.
Prior Publication US 2022/0077348 A1, Mar. 10, 2022
Int. Cl. H01L 33/14 (2010.01); H01L 33/40 (2010.01); H01L 33/20 (2010.01); H01L 33/44 (2010.01); H01L 27/15 (2006.01); H01L 33/38 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/14 (2013.01) [H01L 27/153 (2013.01); H01L 33/20 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/32 (2013.01)] 15 Claims
OG exemplary drawing
 
1. An ultraviolet light emitting element comprising:
a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an etched region in which the first conductive semiconductor layer is exposed;
a first insulating layer disposed on the light emitting structure and including a first hole which exposes a portion of the etched region;
a first electrode electrically connected to the first conductive semiconductor layer; and
a second electrode electrically connected to the second conductive semiconductor layer, wherein the light emitting structure includes an intermediate layer disposed on the first conductive semiconductor layer exposed in the first hole, the first electrode is disposed on the intermediate layer,
wherein the first conductive semiconductor layer includes:
a first sub semiconductor layer,
a second sub semiconductor layer disposed on the first sub semiconductor layer,
a third sub semiconductor layer disposed on the second sub semiconductor layer, and
a fourth sub semiconductor layer disposed on the third sub semiconductor layer;
wherein an aluminum composition of the second sub semiconductor layer is lower than aluminum compositions of the first sub semiconductor layer and the fourth sub semiconductor layer;
wherein an aluminum composition of the third sub semiconductor layer is lower than the aluminum composition of the second sub semiconductor layer; and
wherein the intermediate layer is disposed on the third sub semiconductor layer.