US 11,682,734 B2
Radiation hardened thin-film transistors
Minseo Park, Waverly, AL (US); Michael C. Hamilton, Auburn, AL (US); Shiqiang Wang, Draper, UT (US); and Kosala Yapa Bandara, Hillsboro, OR (US)
Assigned to Auburn University, Auburn, AL (US)
Filed by Auburn University, Auburn, AL (US)
Filed on Jun. 14, 2021, as Appl. No. 17/347,155.
Application 17/347,155 is a division of application No. 16/457,284, filed on Jun. 28, 2019, granted, now 11,069,815.
Claims priority of provisional application 62/691,987, filed on Jun. 29, 2018.
Prior Publication US 2021/0343868 A1, Nov. 4, 2021
Int. Cl. H01L 29/786 (2006.01); H01L 21/768 (2006.01); H01L 21/42 (2006.01); H01L 21/477 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 21/42 (2013.01); H01L 21/477 (2013.01); H01L 21/76868 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a layer comprising zinc oxide or zinc tin oxide;
determining an annealing temperature, wherein the determining is based on a dose of radiation expected to irradiate a thin-film transistor comprising the layer; and
annealing, based on the determining, the layer, wherein the layer has a thickness and threshold displacement energies after the annealing such that when the dose irradiates the layer, a change in performance of the thin-film transistor when a voltage is applied is less than a performance threshold.