CPC H01L 29/7869 (2013.01) [H01L 21/42 (2013.01); H01L 21/477 (2013.01); H01L 21/76868 (2013.01)] | 8 Claims |
1. A method, comprising:
providing a layer comprising zinc oxide or zinc tin oxide;
determining an annealing temperature, wherein the determining is based on a dose of radiation expected to irradiate a thin-film transistor comprising the layer; and
annealing, based on the determining, the layer, wherein the layer has a thickness and threshold displacement energies after the annealing such that when the dose irradiates the layer, a change in performance of the thin-film transistor when a voltage is applied is less than a performance threshold.
|