CPC H01L 29/0847 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/086 (2013.01); H01L 29/0865 (2013.01); H01L 29/0869 (2013.01); H01L 29/0878 (2013.01); H01L 29/0882 (2013.01); H01L 29/0886 (2013.01); H01L 29/167 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. A semiconductor device comprising:
an active region protruding from an upper surface of a substrate and extending in a first horizontal direction;
a plurality of channel layers spaced apart from each other in a vertical direction on the active region;
a plurality of gate electrodes extending in a second horizontal direction and surrounding the plurality of the channel layers, the second horizontal direction crossing the first horizontal direction; and
a plurality of source/drain regions each disposed between an adjacent pair of the plurality of gate electrodes, each of the source/drain regions including outer doped layers in contact with the plurality of channel layers, intermediate doped layers covering the outer doped layers, and an inner doped layer covering the intermediate doped layers,
wherein the outer doped layers include antimony, the intermediate doped layers include arsenic, and the inner doped layer include phosphorous.
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