CPC H01L 29/063 (2013.01) [H01L 21/0465 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7802 (2013.01)] | 17 Claims |
1. A method comprising:
preparing a unit cell of a silicon carbide (SiC) substrate comprising a substrate layer and a drift layer;
forming a well region;
forming a source region within the well region; and
forming a shield region fully surrounding the source region and adjoining a SiC surface,
wherein the substrate layer, the drift layer and the source region comprise a first conductivity type,
wherein the well region and the shield region comprise a second conductivity type at the SiC surface that is opposite to the first conductivity type,
wherein forming the well region comprises performing a first ion implantation through a remnant portion of a first patterned hard mask, and
wherein forming the shield region comprises performing a second ion implantation through a sidewall spacer, formed over the first patterned hard mask.
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