US 11,682,687 B2
Image sensing device
Sun Ho Oh, Icheon-si (KR); Sung Kun Park, Icheon-si (KR); and Kyoung In Lee, Icheon-si (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Nov. 9, 2020, as Appl. No. 17/92,738.
Claims priority of application No. 10-2020-0057387 (KR), filed on May 13, 2020.
Prior Publication US 2021/0358980 A1, Nov. 18, 2021
Int. Cl. H01L 27/146 (2006.01); H01L 27/148 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14612 (2013.01); H01L 27/14831 (2013.01); H01L 27/14603 (2013.01); H01L 27/14605 (2013.01); H01L 27/14614 (2013.01); H01L 27/14616 (2013.01); H01L 27/14641 (2013.01); H01L 27/14643 (2013.01)] 12 Claims
OG exemplary drawing
 
1. An image sensing device comprising:
a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light,
wherein the unit pixels are isolated from each other by first device isolation structures, and each of the unit pixels includes:
a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light;
a floating diffusion region structured to receive the photocharges;
a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region; and
a well tap region structured to apply a bias voltage to a well region,
wherein the well tap region is disposed at a center portion of a corresponding unit pixel.