CPC H01L 23/562 (2013.01) [H01L 21/74 (2013.01); H01L 23/585 (2013.01)] | 24 Claims |
1. An integrated device comprising:
a substrate;
a circuit region located over the substrate;
a design keep out region located over the substrate, the design keep out region laterally surrounding the circuit region; and
a periphery structure located over the substrate, the periphery structure comprising a first plurality of protection interconnects that laterally surrounds the design keep out region,
wherein the periphery structure is configured to operate as an electrical seal ring and a mechanical crack stop,
wherein the first plurality of protection interconnects comprises (i) a plurality of first protection interconnects located on a first metal layer, and (ii) a plurality of second protection interconnects located on a second metal layer,
wherein the second metal layer is located over the first metal layer,
wherein the plurality of first protection interconnects include a first protection interconnect,
wherein the plurality of second protection interconnects include a second protection interconnect and a third protection interconnect,
wherein the second protection interconnect on the second metal layer, vertically overlaps with the first protection interconnect on the first metal layer,
wherein the third protection interconnect on the second metal layer, vertically overlaps with the first protection interconnect on the first metal layer,
wherein the second protection interconnect is offset to the first protection interconnect, and
wherein the third protection interconnect is offset to the first protection interconnect.
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