CPC H01L 23/15 (2013.01) [G06V 40/1329 (2022.01); H01L 24/48 (2013.01); H01L 21/561 (2013.01); H01L 23/3121 (2013.01); H01L 23/4952 (2013.01); H01L 23/49805 (2013.01); H01L 24/05 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48105 (2013.01); H01L 2224/48165 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48992 (2013.01); H01L 2224/48997 (2013.01); H01L 2224/73215 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8592 (2013.01); H01L 2224/92247 (2013.01); H01L 2224/97 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/15313 (2013.01); H01L 2924/181 (2013.01)] | 11 Claims |
8. A method of manufacturing a sensor device, the method comprising:
receiving a first structure comprising:
a substrate having a top substrate side, a bottom substrate side, and a lateral substrate side, the substrate comprising a conductive layer on the top substrate side;
a semiconductor die comprising a top die side, a bottom die side coupled to the top substrate side, and a lateral die side, the semiconductor die comprising a sensing area on the top die side and a conductive pad on the top die side;
a conductive interconnection structure electrically connecting the conductive pad of the semiconductor die to the conductive layer of the substrate; and
an encapsulating material that covers the top substrate side and laterally surrounds the semiconductor die, the encapsulating material comprising a top encapsulating material side, a bottom encapsulating material side coupled to the top substrate side, and a lateral encapsulating material side; and
forming a sensor device comprising:
a dielectric layer (DL) comprising a top DL side, a bottom DL side coupled to the top encapsulating material side, and a lateral DL side; and
a plate positioned over the sensing area of the semiconductor die and over the conductive pad of the semiconductor die, the plate comprising a top plate side, a bottom plate side coupled to the top DL side, and a lateral plate side.
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