US 11,682,555 B2
Methods of manufacturing semiconductor devices
Ji-woon Park, Seoul (KR); Jin-su Lee, Hwaseong-si (KR); and Hyung-suk Jung, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 7, 2021, as Appl. No. 17/224,365.
Application 17/224,365 is a continuation of application No. 16/407,700, filed on May 9, 2019, granted, now 10,991,574.
Claims priority of application No. 10-2018-0118139 (KR), filed on Oct. 4, 2018.
Prior Publication US 2021/0225636 A1, Jul. 22, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); C23C 16/04 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 49/02 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/045 (2013.01); H01L 21/0262 (2013.01); H01L 21/02274 (2013.01); H01L 21/02296 (2013.01); H01L 21/28556 (2013.01); H01L 21/76843 (2013.01); H01L 28/91 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a first insulation layer disposed on the substrate;
a conductive contact disposed in the first insulation layer;
a second insulation layer disposed on the first insulation layer and including a contact hole that exposes a top surface of the conductive contact;
a lower electrode disposed above the substrate and being cylinder-shaped with a filled interior, the lower electrode extending in the contact hole of the second insulation layer and contacting the top surface of the conductive contact;
a dielectric layer disposed on the lower electrode and including a first portion that is disposed on an upper portion of the lower electrode and a second portion that is disposed on a lower portion of the lower electrode;
a first upper electrode disposed on the first portion of the dielectric layer, and including a body portion and an end portion; and
a second upper electrode disposed on the first upper electrode and on the second portion of the dielectric layer,
wherein:
the second upper electrode includes a first portion that is disposed on the first upper electrode, a second portion that is disposed on the second portion of the dielectric layer, and a third portion that is disposed adjacent to the end portion of the first upper electrode,
the third portion of the second upper electrode is disposed between the first portion and the second portion of the second upper electrode, and
a thickness of the third portion of the second upper electrode is greater than a thickness of at least one of the first portion of the second upper electrode or the second portion of the second upper electrode.