US 11,681,168 B2
Silicon-based modulator with optimized doping profile
Alexandre Delisle-Simard, Québec (CA); and Yves Painchaud, Québec (CA)
Assigned to Ciena Corporation, Hanover, MD (US)
Filed by Ciena Corporation, Hanover, MD (US)
Filed on May 2, 2022, as Appl. No. 17/734,427.
Application 17/734,427 is a continuation of application No. 16/666,830, filed on Oct. 29, 2019, granted, now 10,983,369, issued on Apr. 20, 2021.
Application 16/666,830 is a continuation of application No. 16/609,239, granted, now 10,983,369, previously published as PCT/US2019/015258, filed on Jan. 25, 2019.
Claims priority of provisional application 62/712,659, filed on Jul. 31, 2018.
Claims priority of provisional application 62/622,494, filed on Jan. 26, 2018.
Prior Publication US 2022/0260864 A1, Aug. 18, 2022
Int. Cl. G02F 1/025 (2006.01); G02F 1/015 (2006.01)
CPC G02F 1/025 (2013.01) [G02F 1/0156 (2021.01); G02F 2202/06 (2013.01); G02F 2202/105 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A silicon-based modulator comprising:
a waveguide including a contact region and a core region,
wherein the waveguide includes a dopant concentration that decreases from the contact region to the core region in a transition zone according to a doping profile that is variable, wherein the core region is weakly doped relative to the transition zone and includes no variable doping therein.