CPC G02F 1/025 (2013.01) [G02F 1/0156 (2021.01); G02F 2202/06 (2013.01); G02F 2202/105 (2013.01)] | 20 Claims |
1. A silicon-based modulator comprising:
a waveguide including a contact region and a core region,
wherein the waveguide includes a dopant concentration that decreases from the contact region to the core region in a transition zone according to a doping profile that is variable, wherein the core region is weakly doped relative to the transition zone and includes no variable doping therein.
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