US 11,680,476 B2
High temperature and high pressure AlGaN/GaN electronics
David Samuel Ginley, Evergreen, CO (US); Philip Anthony Parilla, Lakewood, CO (US); and Daniel Joseph Friedman, Lakewood, CO (US)
Assigned to Alliance for Sustainable Energy, LLC, Golden, CO (US)
Filed by Alliance for Sustainable Energy, LLC, Golden, CO (US)
Filed on Dec. 16, 2019, as Appl. No. 16/715,877.
Claims priority of provisional application 62/780,018, filed on Dec. 14, 2018.
Prior Publication US 2020/0190962 A1, Jun. 18, 2020
Int. Cl. E21B 47/00 (2012.01); H01L 29/778 (2006.01); E21B 47/022 (2012.01); G01D 21/02 (2006.01); H01L 29/267 (2006.01); H01L 29/205 (2006.01); H01L 29/20 (2006.01)
CPC E21B 47/00 (2013.01) [E21B 47/022 (2013.01); G01D 21/02 (2013.01); H01L 29/7783 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/267 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A device comprising a transistor capable of operating from 250° C. to 400° C. and at pressures greater than 20,000 psi.