US 11,680,337 B2
Fabrication of films having controlled stoichiometry using molecular beam epitaxy
Yong Liang, Niskayuna, NY (US); John Elliott Ortmann, Jr., Palo Alto, CA (US); John Berg, Palo Alto, CA (US); and Ann Melnichuk, Rio Rancho, NM (US)
Assigned to Psiquantum, Corp., Palo Alto, CA (US)
Filed by Psiquantum, Corp., Palo Alto, CA (US)
Filed on Apr. 1, 2021, as Appl. No. 17/219,970.
Claims priority of provisional application 63/004,933, filed on Apr. 3, 2020.
Prior Publication US 2021/0310152 A1, Oct. 7, 2021
Int. Cl. C30B 23/02 (2006.01); C30B 23/00 (2006.01); G06T 7/00 (2017.01); C30B 29/32 (2006.01)
CPC C30B 23/002 (2013.01) [C30B 23/02 (2013.01); C30B 29/32 (2013.01); G06T 7/001 (2013.01); G06T 2207/20081 (2013.01); G06T 2207/30108 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a film, the method comprising:
growing, using a deposition system, at least a portion of the film;
analyzing, using a Reflection High-Energy Electron Diffraction (RHEED) instrument, the at least a portion of the film;
acquiring, using a computer, one or more electron diffraction patterns from the RHEED instrument;
determining a ratio of a first intensity of a first region of interest in the one or more electron diffraction patterns to a second intensity of a second region of interest in the one or more electron diffraction patterns, wherein the ratio is indicative of a stoichiometry of the at least a portion of the film;
calculating, using the computer and based on the ratio, adjustments to one or more process parameters of the deposition system to control stoichiometry of the film during subsequent deposition;
transmitting, using the computer, instructions to the deposition system to execute the adjustments to the one or more process parameters; and
adjusting, using the deposition system, the one or more process parameters.