CPC C30B 23/002 (2013.01) [C30B 23/02 (2013.01); C30B 29/32 (2013.01); G06T 7/001 (2013.01); G06T 2207/20081 (2013.01); G06T 2207/30108 (2013.01)] | 20 Claims |
1. A method of forming a film, the method comprising:
growing, using a deposition system, at least a portion of the film;
analyzing, using a Reflection High-Energy Electron Diffraction (RHEED) instrument, the at least a portion of the film;
acquiring, using a computer, one or more electron diffraction patterns from the RHEED instrument;
determining a ratio of a first intensity of a first region of interest in the one or more electron diffraction patterns to a second intensity of a second region of interest in the one or more electron diffraction patterns, wherein the ratio is indicative of a stoichiometry of the at least a portion of the film;
calculating, using the computer and based on the ratio, adjustments to one or more process parameters of the deposition system to control stoichiometry of the film during subsequent deposition;
transmitting, using the computer, instructions to the deposition system to execute the adjustments to the one or more process parameters; and
adjusting, using the deposition system, the one or more process parameters.
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