US 11,678,593 B2
Semiconductor memory device with a phase change layer and particular heater material
Katsuyoshi Komatsu, Mie (JP); Takeshi Iwasaki, Mie (JP); Tadaomi Daibou, Mie (JP); and Hiroki Kawai, Aichi (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Aug. 12, 2021, as Appl. No. 17/400,912.
Claims priority of application No. JP2021-008890 (JP), filed on Jan. 22, 2021.
Prior Publication US 2022/0238801 A1, Jul. 28, 2022
Int. Cl. G11C 13/00 (2006.01); H01L 45/00 (2006.01)
CPC H01L 45/06 (2013.01) [G11C 13/0004 (2013.01); G11C 13/0069 (2013.01); H01L 45/144 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor memory device comprising:
a first electrode and a second electrode;
a phase change layer disposed between the first electrode and the second electrode; and
a first layer disposed between the first electrode and the phase change layer, wherein
the phase change layer contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te), and
the first layer contains:
aluminum (Al) and antimony (Sb), or
tellurium (Te) and at least one of zinc (Zn), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu),
wherein
the first layer contains a crystal having a first lattice constant,
the phase change layer contains a crystal having a second lattice constant, and
the first lattice constant is larger than 90% and smaller than 110% of the second lattice constant.