US 11,678,530 B2
Display substrate and preparation method thereof, and display apparatus
Wenqu Liu, Beijing (CN); Qi Yao, Beijing (CN); Detian Meng, Beijing (CN); Feng Zhang, Beijing (CN); Zhao Cui, Beijing (CN); Liwen Dong, Beijing (CN); Xiaoxin Song, Beijing (CN); Dongfei Hou, Beijing (CN); Libo Wang, Beijing (CN); and Zhijun Lv, Beijing (CN)
Assigned to BOE Technology Group Co., Ltd., Beijing (CN)
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
Filed on Jun. 28, 2021, as Appl. No. 17/359,675.
Claims priority of application No. 202110035975.8 (CN), filed on Jan. 12, 2021.
Prior Publication US 2022/0223674 A1, Jul. 14, 2022
Int. Cl. H01L 29/32 (2006.01); H10K 59/126 (2023.01); H01L 29/786 (2006.01); H10K 71/00 (2023.01)
CPC H10K 59/126 (2023.02) [H01L 29/7869 (2013.01); H01L 29/78672 (2013.01); H10K 71/00 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A display substrate, comprising: a substrate, an active structure layer disposed on the substrate, a first source-drain structure layer disposed on a side of the active structure layer away from the substrate, and a second source-drain structure layer disposed on a side of the first source-drain structure layer away from the substrate; wherein
the active structure layer comprises a first active layer and a second active layer;
the first source-drain structure layer comprises a first active via and a first source-drain electrode, and the first source-drain electrode is connected to the first active layer through the first active via; and
the second source-drain structure layer comprises a second active via and a second source-drain electrode, and the second source-drain electrode is connected to the second active layer through the second active via;
wherein the second source-drain structure layer comprises:
a seventh insulating layer covering the first source-drain structure layer, wherein a second via is formed on the seventh insulating layer, and an insulating layer covering the second active layer is reserved in the second via;
a first planarization layer disposed on a side of the seventh insulating layer away from the substrate, wherein after a fourth via is formed communicated to the second via on the first planarization layer, the insulating layer in the second via is etched to form the second active via
a second source electrode and a second drain electrode disposed on a side of the seventh insulating layer away from the substrate; wherein the second source electrode and the second drain electrode are both connected to the second active layer through the second active via.