CPC H03H 9/125 (2013.01) [H03H 3/0077 (2013.01); H03H 9/02259 (2013.01); H03H 9/02401 (2013.01); H03H 9/02448 (2013.01); H03H 9/1057 (2013.01); H03H 9/17 (2013.01); H03H 9/2463 (2013.01); H03H 2003/027 (2013.01); H03H 2009/02181 (2013.01); H03H 2009/02307 (2013.01); H03H 2009/155 (2013.01)] | 20 Claims |
1. A method of fabricating a microelectromechanical system (MEMS) resonator, the method comprising:
processing a layer of single crystal silicon which is on a semiconductor substrate, so as to fabricate from layer of single crystal silicon each of a body region, an anchor region and a tether, wherein
the layer of single crystal silicon is degenerately-doped with an N-type dopant,
the body region further comprises a layer of piezoelectric material,
the tether is to permit the body region to vibrate relative to the anchor region, under the influence of electrical stimuli applied to the piezoelectric material, and
the body region has a length dimension, the length dimension being oriented so as to have a predetermined, non-zero angular relationship relative to a crystallographic axis of the single crystal silicon;
measuring a resonant frequency of the body region as formed; and
processing the body region, so to adjust at least one property of the body region and thereby adjust the resonant frequency.
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