CPC H01L 33/22 (2013.01) [H01L 33/007 (2013.01); H01L 33/0093 (2020.05); H01L 33/32 (2013.01); H01L 33/60 (2013.01); H01L 33/00 (2013.01); H01L 33/06 (2013.01); H01L 33/50 (2013.01); H01L 33/54 (2013.01); H01L 2224/16225 (2013.01)] | 20 Claims |
1. A device, comprising:
a gallium nitride (GaN) based light emitting diode (LED) including at least an n-type layer, an emitting layer, and a p-type layer;
wherein light from the emitting layer is extracted through a nitrogen face (N-face) surface of at least one of the layers of the LED, the N-face surface is roughened, and the roughened N-face surface extracts more light out of the LED by scattering or diffracting the light.
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