US 11,677,044 B2
Highly efficient gallium nitride based light emitting diodes via surface roughening
Tetsuo Fujii, Goleta, CA (US); Yan Gao, Durham, NC (US); Evelyn L. Hu, Cambridge, MA (US); and Shuji Nakamura, Santa Barbara, CA (US)
Assigned to THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US)
Filed by The Regents of the University of California, Oakland, CA (US)
Filed on Mar. 18, 2021, as Appl. No. 17/205,249.
Application 17/205,249 is a continuation of application No. 16/561,366, filed on Sep. 5, 2019, granted, now 10,985,293.
Application 16/561,366 is a continuation of application No. 14/281,535, filed on May 19, 2014, granted, now 10,446,714, issued on Oct. 15, 2019.
Application 14/281,535 is a continuation of application No. 12/576,122, filed on Oct. 8, 2009, granted, now 8,766,296, issued on Jul. 1, 2014.
Application 12/576,122 is a continuation of application No. 10/581,940, granted, now 7,704,763, issued on Apr. 27, 2010, previously published as PCT/US03/39211, filed on Dec. 9, 2003.
Prior Publication US 2021/0210657 A1, Jul. 8, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/22 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/60 (2010.01); H01L 33/50 (2010.01); H01L 33/54 (2010.01); H01L 33/06 (2010.01)
CPC H01L 33/22 (2013.01) [H01L 33/007 (2013.01); H01L 33/0093 (2020.05); H01L 33/32 (2013.01); H01L 33/60 (2013.01); H01L 33/00 (2013.01); H01L 33/06 (2013.01); H01L 33/50 (2013.01); H01L 33/54 (2013.01); H01L 2224/16225 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a gallium nitride (GaN) based light emitting diode (LED) including at least an n-type layer, an emitting layer, and a p-type layer;
wherein light from the emitting layer is extracted through a nitrogen face (N-face) surface of at least one of the layers of the LED, the N-face surface is roughened, and the roughened N-face surface extracts more light out of the LED by scattering or diffracting the light.