CPC H01L 33/0095 (2013.01) [H01L 27/156 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01)] | 9 Claims |
1. A light emitting diode (LED) array apparatus comprising:
a plurality of mesas etched from a layered epitaxial structure, wherein the layered epitaxial structure comprises a P-type doped semiconductor layer, an active layer, and an N-type doped semiconductor layer; and
one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, grown epitaxially over etched facets of the plurality of mesas,
wherein for each mesa, the first regrowth semiconductor layer overlays etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa, but with the first regrowth semiconductor layer being absent from a top surface of the mesa.
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