US 11,677,042 B2
Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes
Markus Broell, Cork (IE); Michael Grundmann, Kirkland, WA (US); David Hwang, Cork (IE); Stephan Lutgen, Dresden (DE); Brian Matthew Mcskimming, Mill Creek, WA (US); and Anurag Tyagi, Kirkland, WA (US)
Assigned to META PLATFORMS TECHNOLOGIES, LLC, Menlo Park, CA (US)
Filed by Meta Platforms Technologies, LLC, Menlo Park, CA (US)
Filed on Mar. 29, 2020, as Appl. No. 16/833,614.
Claims priority of provisional application 62/826,683, filed on Mar. 29, 2019.
Prior Publication US 2020/0313036 A1, Oct. 1, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 27/15 (2006.01)
CPC H01L 33/0095 (2013.01) [H01L 27/156 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A light emitting diode (LED) array apparatus comprising:
a plurality of mesas etched from a layered epitaxial structure, wherein the layered epitaxial structure comprises a P-type doped semiconductor layer, an active layer, and an N-type doped semiconductor layer; and
one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, grown epitaxially over etched facets of the plurality of mesas,
wherein for each mesa, the first regrowth semiconductor layer overlays etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa, but with the first regrowth semiconductor layer being absent from a top surface of the mesa.