US 11,677,040 B2
Method and apparatus for enhanced photoconductivity of semiconductor
Gary A. Frazier, Garland, TX (US); and Kyle L. Grosse, Elk Grove Village, IL (US)
Assigned to Raytheon Company, Waltham, MA (US)
Filed by Raytheon Company, Waltham, MA (US)
Filed on Nov. 21, 2019, as Appl. No. 16/690,181.
Prior Publication US 2021/0159357 A1, May 27, 2021
Int. Cl. H01L 31/09 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 31/14 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/09 (2013.01) [H01L 31/028 (2013.01); H01L 31/0216 (2013.01); H01L 31/022475 (2013.01); H01L 31/143 (2013.01); H01L 31/1804 (2013.01); H01L 31/1884 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A photoconductor assembly comprising:
a substrate formed of an undoped and single-crystal semiconductor material that is configured to reflect or absorb electromagnetic energy;
a plurality of electrodes arranged normal to the substrate;
a power supply that applies a voltage to the electrodes for modulating the electromagnetic energy through the substrate; and
a light source that generates excitation wavelengths for illuminating the substrate having energies that are equal to or greater than a band gap energy of the semiconductor material;
wherein the plurality of electrodes are arranged on opposing sides of the substrate; and
wherein the power supply is used to electrically bias the substrate and reduce a recombination rate of relevant carriers by increasing radio frequency modulation.