US 11,677,038 B2
Perpetual energy harvester and method of fabrication
Achyut Kumar Dutta, Sunnyvale, CA (US)
Assigned to BANPIL PHOTONICS, INC., Santa Clara, CA (US)
Filed by Achyut Kumar Dutta, Sunnyvale, CA (US)
Filed on May 28, 2011, as Appl. No. 13/118,399.
Prior Publication US 2012/0298190 A1, Nov. 29, 2012
Int. Cl. H01L 31/0687 (2012.01); H01L 31/0352 (2006.01); H01L 31/076 (2012.01); H01L 31/0236 (2006.01); H01L 31/0224 (2006.01); H01L 31/075 (2012.01); H01L 31/043 (2014.01); H01L 31/054 (2014.01)
CPC H01L 31/0687 (2013.01) [H01L 31/02363 (2013.01); H01L 31/022425 (2013.01); H01L 31/022433 (2013.01); H01L 31/03529 (2013.01); H01L 31/035218 (2013.01); H01L 31/035227 (2013.01); H01L 31/043 (2014.12); H01L 31/0543 (2014.12); H01L 31/0547 (2014.12); H01L 31/075 (2013.01); H01L 31/076 (2013.01); Y02E 10/52 (2013.01); Y02E 10/544 (2013.01); Y02E 10/548 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An energy harvester configured to harvest energy during both day and night, comprising:
a substrate formed from a non-electrically conductive material, wherein the substrate has a first surface and a second surface;
a first electrode;
a second electrode;
a solar harvester on the first surface of the substrate and electrically connected between the first and second electrodes, comprising
at least one first p-n or p-i-n junction formed on or into the substrate, wherein the at least one first p-n or p-i-n junction comprising cutoff wavelengths between 0.3 μm to 2.5 μm;
wherein the second electrode being in contact to a n or a p layer forming the at least one first p-n or p-i-n junction and insulated from a conductive material that encircles the second electrode;
a buffer layer directly attached to the second surface of the substrate, wherein the buffer layer comprises a semiconductor material from a group consisting of CdZnTe, HgCdTe, HgZnTe, ZnS, CdS, CdTe, ZnSe, CdSe and combinations thereof;
a third electrode;
a fourth electrode; and
a thermal harvester attached to the buffer layer and electrically connected between the third and fourth electrodes, comprising
a absorption layer attached to the buffer layer, comprising
a first material of p or n type layer; and
a second material of n or p type layer,
wherein the first and the second material layers forming at least one second p-i-n junction with an additional intrinsic or low doped material layer in between the first and second material layers and providing an open circuit voltage and the at least one second p-i-n junction comprising
cutoff wavelengths between 2 μm to 40 μm, and
wherein the energy harvester is monolithic.