US 11,676,993 B2
Method and structure for dual sheet resistance trimmable thin film resistors
Christoph Andreas Othmar Dirnecker, Eching (DE); Wolfgang Schwartz, Au (DE); Doug Weiser, Plano, TX (US); Joel Martin Halbert, Tucson, AZ (US); Joseph Anthony DeSantis, Gilroy, CA (US); and Karsten Jens Spinger, Ingolstadt (DE)
Assigned to Texas Instruments Incorporated, Dallas, TX (US)
Filed by TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed on Sep. 8, 2020, as Appl. No. 17/14,094.
Application 17/014,094 is a division of application No. 15/976,357, filed on May 10, 2018, granted, now 10,770,538.
Application 15/976,357 is a continuation of application No. 15/209,696, filed on Jul. 13, 2016, granted, now 9,991,329, issued on Jun. 5, 2018.
Prior Publication US 2020/0403061 A1, Dec. 24, 2020
Int. Cl. H01L 23/522 (2006.01); H01L 49/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/027 (2006.01); H01L 21/268 (2006.01)
CPC H01L 28/24 (2013.01) [H01L 21/0273 (2013.01); H01L 21/268 (2013.01); H01L 21/32139 (2013.01); H01L 23/5226 (2013.01); H01L 23/5228 (2013.01)] 24 Claims
OG exemplary drawing
 
1. An electronic device, comprising:
a first resistor including a first resistive layer located over a substrate and having a first sheet resistance; and
a second resistor including a first portion of a second resistive layer located over said substrate and having a second sheet resistance different from said first sheet resistance,
said first resistive layer contacting a second noncontiguous portion of said second resistive layer.