CPC H01L 27/14643 (2013.01) [H01L 27/14689 (2013.01)] | 14 Claims |
1. A manufacturing method of manufacturing a semiconductor structure for forming a CMOS image sensor, the manufacturing method comprising:
providing a substrate;
forming a second doped region, a first doped region and a first pinning layer sequentially from bottom to top in a height direction of the substrate in the substrate to form a photodiode of the CMOS image sensor;
forming a third doped region in the substrate corresponding to a laterally extending region of the second doped region;
forming an ion doped region and a second pinning layer in order from bottom to top in the substrate in the height direction of the substrate to form a storage node of the CMOS image sensor; and
forming a fourth doped region between the third doped region and the ion doped region of the storage node,
wherein the storage node is formed over the third doped region, and the third doped region is isolated from the ion doped region of the storage node by the fourth doped region,
wherein the ion doping concentration of the first doped region is greater than the ion doping concentration of the second doped region, and the ion doping concentration of the second doped region is greater than the ion doping concentration of the third doped region such that the formed third doped region is in contact with the second doped region after diffusion.
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