CPC H01L 27/0924 (2013.01) [H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 24/17 (2013.01); H01L 25/065 (2013.01); H01L 29/0673 (2013.01); H01L 29/1033 (2013.01); H01L 29/16 (2013.01); H01L 29/20 (2013.01); H01L 29/7851 (2013.01); H01L 2224/0401 (2013.01)] | 19 Claims |
1. An integrated circuit (IC) structure, comprising:
a first device stratum including a first channel material, wherein the first channel material includes a wire;
a second device stratum including a second channel material, wherein the second channel material is above and aligned with the first channel material, and the second channel material includes a fin;
a first gate metal at least partially surrounding the first channel material; and
a second gate metal at least partially surrounding the second channel material;
wherein a width of the first channel material is different from a width of the second channel material and the first gate metal has a different material composition than the second gate metal.
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