CPC H01L 23/5329 (2013.01) [H01L 29/2003 (2013.01); H01L 29/778 (2013.01); H01L 29/1608 (2013.01); H01L 29/7393 (2013.01); H01L 29/78 (2013.01)] | 21 Claims |
1. A power semiconductor device comprising:
a package comprising a dielectric body;
a power semiconductor die embedded in the dielectric body of the package;
the power semiconductor die being rated for operation with at least one of a rated operating voltage ≥100V and a rated operating temperature ≥100 C,
wherein, the dielectric body comprises a dielectric polymer composition that provides a conductivity less than a reliability threshold value of conduction for the rated operating voltage and temperature.
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