US 11,676,899 B2
Embedded packaging for high voltage, high temperature operation of power semiconductor devices
Thomas Macelwee, Nepean (CA)
Assigned to GaN Systems Inc., Kanata (CA)
Filed by GaN Systems Inc., Kanata (CA)
Filed on Oct. 2, 2020, as Appl. No. 17/61,839.
Application 17/061,839 is a continuation of application No. 16/380,318, filed on Apr. 10, 2019, granted, now 10,796,998.
Prior Publication US 2021/0020573 A1, Jan. 21, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/78 (2006.01); H01L 23/532 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/16 (2006.01); H01L 29/739 (2006.01)
CPC H01L 23/5329 (2013.01) [H01L 29/2003 (2013.01); H01L 29/778 (2013.01); H01L 29/1608 (2013.01); H01L 29/7393 (2013.01); H01L 29/78 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A power semiconductor device comprising:
a package comprising a dielectric body;
a power semiconductor die embedded in the dielectric body of the package;
the power semiconductor die being rated for operation with at least one of a rated operating voltage ≥100V and a rated operating temperature ≥100 C,
wherein, the dielectric body comprises a dielectric polymer composition that provides a conductivity less than a reliability threshold value of conduction for the rated operating voltage and temperature.