US 11,676,858 B2
High bias deposition of high quality gapfill
Samuel E. Gottheim, Santa Clara, CA (US); Eswaranand Venkatasubramanian, Santa Clara, CA (US); Pramit Manna, Sunnyvale, CA (US); and Abhijit Basu Mallick, Palo Alto, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 29, 2021, as Appl. No. 17/362,304.
Application 17/362,304 is a continuation of application No. 16/445,654, filed on Jun. 19, 2019, granted, now 11,062,939.
Claims priority of provisional application 62/687,234, filed on Jun. 19, 2018.
Prior Publication US 2021/0327752 A1, Oct. 21, 2021
Int. Cl. H01L 21/768 (2006.01); H01L 21/683 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/76837 (2013.01) [H01J 37/32183 (2013.01); H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01J 37/32568 (2013.01); H01L 21/0217 (2013.01); H01L 21/02115 (2013.01); H01L 21/02164 (2013.01); H01L 21/67248 (2013.01); H01L 21/6833 (2013.01); H01L 21/76224 (2013.01); H01J 2237/3321 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A gapfill deposition method comprising:
generating a plasma above a substrate from a gapfill precursor by applying, at the same time, a first RF bias and a second RF bias to an electrostatic chuck supporting the substrate to deposit a gapfill within at least one feature within the substrate, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having an opening width at the substrate surface defined by a first sidewall and a second sidewall.