US 11,676,832 B2
Laser ablation system for package fabrication
Kurtis Leschkies, San Jose, CA (US); Jeffrey L. Franklin, Albuquerque, NM (US); Wei-Sheng Lei, Santa Clara, CA (US); Steven Verhaverbeke, San Francisco, CA (US); Jean Delmas, Santa Clara, CA (US); Han-Wen Chen, Cupertino, CA (US); and Giback Park, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jul. 24, 2020, as Appl. No. 16/938,517.
Prior Publication US 2022/0028709 A1, Jan. 27, 2022
Int. Cl. H01L 21/67 (2006.01); H01L 21/48 (2006.01); B23K 26/0622 (2014.01); B23K 26/382 (2014.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01)
CPC H01L 21/67121 (2013.01) [B23K 26/0622 (2015.10); B23K 26/382 (2015.10); H01L 21/486 (2013.01); H01L 23/3121 (2013.01); H01L 23/49827 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A system for laser patterning a semiconductor device substrate, comprising:
a diode-pumped solid-state laser source configured to generate a pulsed laser beam, the laser source comprising a slab gain medium, the laser source further characterized by:
a pulse energy between about 0.25 mJ and about 10 mJ;
a pulse width between about 1 ns and about 4000 ns; and
a pulse frequency between about 1 kHz and about 200 kHz;
a galvanometer optical scanner;
a first telecentric lens having a field of view (FOV) with lateral dimensions substantially equal to or greater than about 137 mm, the first telecentric lens having a working distance between about 30 mm and about 500 mm; and
a second telecentric lens having FOV with lateral dimensions substantially equal to or greater than about 137 mm and a working distance between about 30 mm and about 500 mm.