US 11,676,663 B2
Control method and controller of program suspending and resuming for memory
Zhi Chao Du, Wuhan (CN); Yu Wang, Wuhan (CN); Haibo Li, Wuhan (CN); Ke Jiang, Wuhan (CN); and Ye Tian, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Jan. 11, 2022, as Appl. No. 17/573,532.
Application 17/573,532 is a continuation of application No. 17/187,690, filed on Feb. 26, 2021, granted, now 11,250,914.
Application 17/187,690 is a continuation of application No. 16/905,838, filed on Jun. 18, 2020, granted, now 10,978,158.
Application 16/905,838 is a continuation of application No. PCT/CN2020/091037, filed on May 19, 2020.
Prior Publication US 2022/0139462 A1, May 5, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 16/10 (2006.01); G11C 7/12 (2006.01); G11C 7/22 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/10 (2013.01) [G11C 7/12 (2013.01); G11C 7/227 (2013.01); G11C 16/3459 (2013.01); G11C 2207/002 (2013.01); G11C 2216/20 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory system, comprising:
a memory cell array; and
a controller coupled to the memory cell array and configured to:
control applying a first program voltage to a word line to program memory cells in the memory cell array, the memory cells being coupled to the word line; and
in response to receiving a suspend command, control applying a positive bias discharge voltage to the word line when the first program voltage ramps down.