CPC G11C 11/1673 (2013.01) [G11C 11/161 (2013.01)] | 20 Claims |
1. A circuit, comprising:
a magnetic tunnel junction (“MTJ”) structure;
a first bipolar junction transistor having a first emitter node and a first base node, the first emitter node being coupled to a sensing element through a sensing path and the first base node being coupled to a read path that includes the magnetic tunnel junction structure; and
a second bipolar junction transistor having a second emitter node and a second base node, the second emitter node being coupled to a sensing reference path, and the second base node being coupled to a read reference path that includes a reference resistive element.
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