US 11,676,648 B2
Current steering in reading magnetic tunnel junction
Gaurav Gupta, Hsinchu (TW); Zhiqiang Wu, Hsinchu (TW); and Yih Wang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 24, 2022, as Appl. No. 17/703,869.
Application 17/703,869 is a continuation of application No. 16/655,056, filed on Oct. 16, 2019, granted, now 11,309,005.
Claims priority of provisional application 62/753,751, filed on Oct. 31, 2018.
Prior Publication US 2022/0215869 A1, Jul. 7, 2022
Int. Cl. G11C 11/16 (2006.01)
CPC G11C 11/1673 (2013.01) [G11C 11/161 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A circuit, comprising:
a magnetic tunnel junction (“MTJ”) structure;
a first bipolar junction transistor having a first emitter node and a first base node, the first emitter node being coupled to a sensing element through a sensing path and the first base node being coupled to a read path that includes the magnetic tunnel junction structure; and
a second bipolar junction transistor having a second emitter node and a second base node, the second emitter node being coupled to a sensing reference path, and the second base node being coupled to a read reference path that includes a reference resistive element.