US 11,674,829 B2
Low-power sensor memory
Sean E. Doris, San Francisco, CA (US); and Kent Evans, Sunnyvale, CA (US)
Assigned to PALO ALTO RESEARCH CENTER INCORPORATED, Palo Alto, CA (US)
Filed by PALO ALTO RESEARCH CENTER INCORPORATED, Palo Alto, CA (US)
Filed on Dec. 23, 2019, as Appl. No. 16/726,192.
Prior Publication US 2021/0190551 A1, Jun. 24, 2021
Int. Cl. G01D 9/00 (2006.01); G01N 27/00 (2006.01); G01D 9/02 (2006.01); G01N 27/416 (2006.01); G11C 13/02 (2006.01); H01B 1/02 (2006.01); H01B 1/06 (2006.01)
CPC G01D 9/02 (2013.01) [G01N 27/416 (2013.01); G11C 13/02 (2013.01); H01B 1/02 (2013.01); H01B 1/06 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A sensor system, comprising:
a sensor configured to measure a parameter; and
a memory configured to record one or more occurrences when the parameter is outside of a predetermined range, wherein the memory comprises:
a wire;
a counter-electrode; and
an electrolyte,
wherein the wire and the counter-electrode are configured to receive the voltage from the sensor,
wherein the voltage generates an electrical current between the wire and the counter-electrode,
wherein the electrical current causes an electrochemical reaction in the wire, the counter-electrode, or both when the parameter is outside of the predetermined range, and
wherein the electrochemical reaction causes corrosion of the wire, which causes a conductance of the wire to decrease.