US 11,673,828 B2
Heat-treated material with improved mechanical properties
Denis Guimard, Paris (FR); Johann Skolski, Paris (FR); Romain Hivet, Saint-Ouen (FR); and Joël Bellemin, Draveil (FR)
Assigned to SAINT-GOBAIN GLASS FRANCE, Courbevoie (FR)
Appl. No. 17/291,870
Filed by SAINT-GOBAIN GLASS FRANCE, Courbevoie (FR)
PCT Filed Nov. 15, 2019, PCT No. PCT/FR2019/052716
§ 371(c)(1), (2) Date May 6, 2021,
PCT Pub. No. WO2020/099799, PCT Pub. Date May 22, 2020.
Claims priority of application No. 1860583 (FR), filed on Nov. 16, 2018.
Prior Publication US 2022/0009827 A1, Jan. 13, 2022
Int. Cl. C03C 17/36 (2006.01)
CPC C03C 17/3639 (2013.01) [C03C 17/366 (2013.01); C03C 17/3626 (2013.01); C03C 17/3644 (2013.01); C03C 17/3649 (2013.01); C03C 17/3655 (2013.01); C03C 17/3681 (2013.01); C03C 2217/268 (2013.01); C03C 2217/78 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A material comprising a transparent substrate coated with a stack of thin layers comprising at least one silver-based functional metallic layer and at least two dielectric coatings, each dielectric coating including at least one dielectric layer, so that each silver-based functional metallic layer is disposed between two dielectric coatings,
wherein the stack comprises, in the following order starting from the substrate:
a first silicon nitride layer;
a first crystallized zinc oxide layer in contact with the first silicon nitride layer and having a first thickness from 1.0 nm to 8.0 nm;
a silver-based functional metallic layer in contact with the first crystallized zinc oxide layer or separated from the first crystallized zinc oxide layer by a blocking underlayer having a thickness from 0.1 nm to 5.0 nm;
a nickel chromium-based metallic layer in contact with the silver-based functional metallic layer and having a thickness from 0.1 nm to 5.0 nm;
a zinc-based metallic layer in contact with the nickel chromium-based metallic layer;
a second crystallized zinc oxide layer in direct contact with the zinc-based metallic layer and having a second thickness from 1.0 nm to 8.0 nm, and
a second silicon nitride layer in contact with the second crystallized zinc oxide layer,
wherein a total thickness separating the first silicon nitride layer from the silver layer is from 1 nm to 13 nm.