US 11,672,190 B2
Electronic synaptic device and method for manufacturing same
Tae Whan Kim, Seoul (KR); Jeong Woon Lee, Seoul (KR); Beom Hui Yoo, Seongnam-si (KR); and Si Hyun Sung, Seoul (KR)
Assigned to INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY, Seoul (KR)
Filed by Industry-University Cooperation Foundation Hanyang University, Seoul (KR)
Filed on May 10, 2021, as Appl. No. 17/315,434.
Claims priority of application No. 10-2020-0123143 (KR), filed on Sep. 23, 2020.
Prior Publication US 2022/0093854 A1, Mar. 24, 2022
Int. Cl. H10N 70/20 (2023.01); H01L 45/00 (2006.01)
CPC H01L 45/10 (2013.01) [H01L 45/1233 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/148 (2013.01); H01L 45/1608 (2013.01)] 14 Claims
OG exemplary drawing
 
1. An electronic synaptic device comprising:
a lower electrode;
an upper electrode; and
an active layer provided between the lower electrode and the upper electrode and comprising a plurality of conductive nanoparticles,
wherein the conductive nanoparticles are dispersed in a matrix forming a continuous phase, and the matrix is composed of a protein,
wherein the protein is gelatin, and
wherein the electronic synaptic device is a nonvolatile memory device whose resistance changes according to an applied voltage.