US 11,672,189 B2
Two-terminal reversibly switchable memory device
Darrell Rinerson, Cupertino, CA (US); Christophe J. Chevallier, Palo Alto, CA (US); Wayne Kinney, Emmett, ID (US); Roy Lambertson, Los Altos, CA (US); John E. Sanchez, Jr., Palo Alto, CA (US); Lawrence Schloss, Palo Alto, CA (US); Philip Swab, Santa Rosa, CA (US); and Edmond Ward, Monte Sereno, CA (US)
Assigned to Hefei Reliance Memory Limited, Hefei (CN)
Filed by HEFEI RELIANCE MEMORY LIMITED, Hefei (CN)
Filed on Mar. 8, 2021, as Appl. No. 17/194,609.
Application 17/194,609 is a continuation of application No. 16/864,051, filed on Apr. 30, 2020, granted, now 11,063,214.
Application 16/864,051 is a continuation of application No. 16/262,841, filed on Jan. 30, 2019, granted, now 10,680,171, issued on Jun. 9, 2020.
Application 16/262,841 is a continuation of application No. 15/797,452, filed on Oct. 30, 2017, granted, now 10,224,480, issued on Mar. 5, 2019.
Application 15/797,452 is a continuation of application No. 14/844,805, filed on Sep. 3, 2015, granted, now 9,831,425, issued on Nov. 28, 2017.
Application 14/844,805 is a continuation of application No. 14/463,518, filed on Aug. 19, 2014, granted, now 9,159,913, issued on Oct. 13, 2015.
Application 14/463,518 is a continuation of application No. 12/456,627, filed on Jun. 18, 2009, abandoned.
Application 12/456,627 is a continuation of application No. 11/095,026, filed on Mar. 30, 2005, abandoned.
Application 11/095,026 is a continuation in part of application No. 10/934,951, filed on Sep. 3, 2004, granted, now 7,538,338, issued on May 26, 2009.
Application 10/934,951 is a continuation in part of application No. 10/773,549, filed on Feb. 6, 2004, granted, now 7,082,052, issued on Jul. 25, 2006.
Prior Publication US 2021/0193917 A1, Jun. 24, 2021
Int. Cl. H10N 70/20 (2023.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01); H10N 70/00 (2023.01); H10B 63/00 (2023.01); G06F 30/30 (2020.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01)
CPC H01L 45/08 (2013.01) [G06F 30/30 (2020.01); G11C 11/5685 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0009 (2013.01); G11C 13/0069 (2013.01); H01L 27/2436 (2013.01); H01L 27/2481 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1625 (2013.01); G11C 2013/005 (2013.01); G11C 2013/009 (2013.01); G11C 2013/0045 (2013.01); G11C 2213/11 (2013.01); G11C 2213/31 (2013.01); G11C 2213/32 (2013.01); G11C 2213/53 (2013.01); G11C 2213/54 (2013.01); G11C 2213/56 (2013.01); G11C 2213/71 (2013.01); G11C 2213/79 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory element, comprising:
an oxygen repository;
a mixed valence conductive oxide that is less conductive in its oxygen deficient state; and
an electrolytic tunnel barrier that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.