CPC H01L 45/08 (2013.01) [G06F 30/30 (2020.01); G11C 11/5685 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0009 (2013.01); G11C 13/0069 (2013.01); H01L 27/2436 (2013.01); H01L 27/2481 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1625 (2013.01); G11C 2013/005 (2013.01); G11C 2013/009 (2013.01); G11C 2013/0045 (2013.01); G11C 2213/11 (2013.01); G11C 2213/31 (2013.01); G11C 2213/32 (2013.01); G11C 2213/53 (2013.01); G11C 2213/54 (2013.01); G11C 2213/56 (2013.01); G11C 2213/71 (2013.01); G11C 2213/79 (2013.01)] | 20 Claims |
1. A memory element, comprising:
an oxygen repository;
a mixed valence conductive oxide that is less conductive in its oxygen deficient state; and
an electrolytic tunnel barrier that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.
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