US 11,672,164 B2
Display apparatus with doped barrier and conductive layers and method of manufacturing the same
Minkyung Kang, Yongin-si (KR); Byungsoo So, Yongin-si (KR); Jaewoo Jeong, Yongin-si (KR); Jongjun Baek, Yongin-si (KR); and Hiroshi Okumura, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-Si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Oct. 22, 2020, as Appl. No. 17/77,648.
Claims priority of application No. 10-2020-0043605 (KR), filed on Apr. 9, 2020.
Prior Publication US 2021/0320268 A1, Oct. 14, 2021
Int. Cl. H01L 51/00 (2006.01); H01L 27/32 (2006.01); H01L 51/56 (2006.01)
CPC H01L 51/0097 (2013.01) [H01L 27/3244 (2013.01); H01L 51/56 (2013.01); H01L 2251/5338 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A display apparatus comprising:
a first substrate;
a conductive layer arranged on the first substrate doped with n-type impurities or p-type impurities;
a first barrier layer arranged on the conductive layer and doped with n-type impurities or p-type impurities; and
a semiconductor layer arranged on the first barrier layer, wherein
the conductive layer is doped with n-type impurities when the first barrier layer is doped with n-type impurities,
the conductive layer is doped with p-type impurities when the first barrier layer is doped with p-type impurities, and
the n-type impurities include one of phosphorous, fluorine, and nitrogen.