US 11,672,146 B2
Display device comprises a concentration of fluorine provides first peak in first area and second peak in third area contained in the semiconductor layer
Jae Bum Han, Suwon-si (KR); Moon Sung Kim, Anyang-si (KR); Young Gil Park, Asan-si (KR); and Soo Im Jeong, Hwaseong-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Jul. 12, 2021, as Appl. No. 17/373,602.
Claims priority of application No. 10-2020-0091423 (KR), filed on Jul. 23, 2020.
Prior Publication US 2022/0028947 A1, Jan. 27, 2022
Int. Cl. H01L 29/08 (2006.01); H01L 27/32 (2006.01); G09G 3/3233 (2016.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/3262 (2013.01) [H01L 27/323 (2013.01); G09G 3/3233 (2013.01); G09G 2300/0426 (2013.01); H01L 27/1222 (2013.01); H01L 27/1274 (2013.01); H01L 29/66757 (2013.01); H01L 29/78675 (2013.01); H01L 2227/323 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A display device comprising:
a substrate; and
a semiconductor layer disposed on the substrate, and comprising a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer,
wherein the semiconductor layer comprises polycrystalline silicon,
a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and
the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.