US 11,672,131 B2
Memory device and method of manufacturing the same
Yumin Kim, Seoul (KR); Seyun Kim, Seoul (KR); Jinhong Kim, Seoul (KR); Soichiro Mizusaki, Suwon-si (KR); and Youngjin Cho, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 11, 2021, as Appl. No. 17/317,154.
Claims priority of application No. 10-2020-0113196 (KR), filed on Sep. 4, 2020.
Prior Publication US 2022/0077235 A1, Mar. 10, 2022
Int. Cl. H01L 27/24 (2006.01); H01L 45/00 (2006.01)
CPC H01L 27/2481 (2013.01) [H01L 27/2454 (2013.01); H01L 45/06 (2013.01); H01L 45/1253 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising:
an insulating structure including a first surface and a protrusion portion protruding from the first surface in a first direction;
a recording material layer on the insulating structure, the recording material layer extending along a protruding surface of the protrusion portion to cover the protrusion portion and extending onto the first surface of the insulating structure;
a channel layer on the recording material layer and extending along a surface of the recording material layer;
a gate insulating layer on the channel layer; and
a gate electrode on the gate insulating layer at a location facing a second surface of the insulating structure, the second surface of the insulating structure being a protruding upper surface of the protrusion portion.