US 11,672,129 B2
Memory device
Shoichi Kabuyanagi, Yokkaichi (JP); Yuuichi Kamimuta, Yokkaichi (JP); Masumi Saitoh, Yokkaichi (JP); and Marina Yamaguchi, Yokkaichi (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Minato-ku (JP)
Filed on Jan. 13, 2021, as Appl. No. 17/147,695.
Application 17/147,695 is a division of application No. 15/904,655, filed on Feb. 26, 2018, granted, now 10,923,486.
Claims priority of application No. JP2017-181223 (JP), filed on Sep. 21, 2017.
Prior Publication US 2021/0134814 A1, May 6, 2021
Int. Cl. H01L 27/115 (2017.01); H01L 27/11507 (2017.01); H01L 29/51 (2006.01); H01L 27/24 (2006.01)
CPC H01L 27/11507 (2013.01) [H01L 27/24 (2013.01); H01L 29/516 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A memory device comprising:
a first conductive layer;
a second conductive layer;
a ferroelectric layer provided between the first conductive layer and the second conductive layer and containing hafnium oxide;
a paraelectric layer provided between the first conductive layer and the ferroelectric layer and containing a first oxide; and
an oxide layer provided between the ferroelectric layer and the second conductive layer, the oxide layer being in contact with the ferroelectric layer, and containing a second oxide having an oxygen area density lower than an oxygen area density of hafnium oxide.