US 11,672,118 B2
Electronic devices comprising adjoining oxide materials and related systems
Shyam Surthi, Boise, ID (US); Richard J. Hill, Boise, ID (US); Gurtej S. Sandhu, Boise, ID (US); Byeung Chul Kim, Boise, ID (US); Francois H. Fabreguette, Boise, ID (US); Chris M. Carlson, Nampa, ID (US); Michael E. Koltonski, Boise, ID (US); and Shane J. Trapp, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 4, 2020, as Appl. No. 17/13,047.
Prior Publication US 2022/0077176 A1, Mar. 10, 2022
Int. Cl. H01L 27/11582 (2017.01)
CPC H01L 27/11582 (2013.01) 17 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a cell region comprising stacks of alternating dielectric materials and conductive materials;
a pillar region adjacent to the cell region, the pillar region comprising storage node segments adjacent to adjoining oxide materials and adjacent to a tunnel region, the storage node segments vertically separated only by a lateral extension of the tunnel region; and
a high-k dielectric material adjacent to the conductive materials of the cell region and to the adjoining oxide materials of the pillar region.