US 11,672,113 B2
Semiconductor storage device
Kaihei Kato, Yokkaichi Mie (JP); Takashi Fukushima, Yokkaichi Mie (JP); and Kazutaka Suzuki, Kuwana Mie (JP)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Aug. 31, 2020, as Appl. No. 17/7,675.
Claims priority of application No. JP2019-213410 (JP), filed on Nov. 26, 2019.
Prior Publication US 2021/0159239 A1, May 27, 2021
Int. Cl. H01L 27/11575 (2017.01); H01L 27/11556 (2017.01); G11C 5/06 (2006.01); G11C 5/02 (2006.01); H01L 27/11582 (2017.01)
CPC H01L 27/11556 (2013.01) [G11C 5/025 (2013.01); G11C 5/06 (2013.01); H01L 27/11582 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor storage device comprising:
a substrate having a surface;
a first conductive layer disposed on the substrate, the first conductive layer extending in a first direction parallel to the surface of the substrate, the first conductive layer having a hole extending through the first conductive layer;
a second conductive layer disposed on over the first conductive layer, and extending in the first direction;
a first insulating layer disposed between the first conductive layer and the second conductive layer,
a first insulation plug disposed on the substrate, the first insulation plug extending in a second direction intersecting with the first direction, the first insulation plug extending through the hole of the first conductive layer; and
a contact plug disposed on the first insulation plug, the contact plug extending in the second direction, and intersecting with the second conductive layer,
wherein a first width of the hole of the first conductive layer in the first direction is substantially the same as a second width of the first insulation plug at the first insulating layer in the first direction,
wherein a corner between the hole and an upper surface of the second conductive layer is covered with a second insulating layer.