US 11,671,097 B2
Capacitance detection module and method
Shuqing Cheng, Shenzhen (CN); Ming Yang, Shenzhen (CN); Fulin Li, Shenzhen (CN); and Zicheng Guo, Shenzhen (CN)
Assigned to SHENZHEN GOODIX TECHNOLOGY CO., LTD., Shenzhen (CN)
Filed by SHENZHEN GOODIX TECHNOLOGY CO., LTD., Shenzhen (CN)
Filed on Aug. 17, 2022, as Appl. No. 17/890,212.
Application 17/890,212 is a continuation of application No. 16/700,967, filed on Dec. 2, 2019, granted, now 11,448,675.
Application 16/700,967 is a continuation of application No. PCT/CN2018/109204, filed on Sep. 30, 2018.
Prior Publication US 2022/0399892 A1, Dec. 15, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H03K 17/96 (2006.01); A61B 5/00 (2006.01); G01R 27/26 (2006.01); G01D 5/24 (2006.01)
CPC H03K 17/962 (2013.01) [A61B 5/6802 (2013.01); G01D 5/24 (2013.01); G01R 27/2605 (2013.01); H03K 17/96 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A capacitance detection module, comprising: a sensing module and a detecting circuit; a first sensing unit is disposed on a first surface of the sensing module, and a second sensing unit is disposed on a second surface of the sensing module; the first sensing unit and the second sensing unit are respectively connected to the detecting circuit;
the detecting circuit is configured to determine, according to a capacitance value of the first sensing unit and a capacitance value of the second sensing unit, a wearing state of a device having the capacitance detection module;
wherein the first sensing unit is directly opposite to the second sensing unit, the capacitance value of the first sensing unit is a self-capacitance value between the first sensing unit and the second sensing unit which is grounded, the capacitance value of the second sensing unit is a self-capacitance value between the second sensing unit and the first sensing unit which is grounded; wherein the detecting circuit further comprises a changeover switch, wherein the changeover switch is configured to perform an alternate switching between a first state and a second state of the state of the sensing module, wherein the first state is that the first sensing unit is respectively connected to a driving voltage output by the detecting circuit and a sensing channel of the detecting circuit, and the second sensing unit is connected to the ground; wherein the second state is that the second sensing unit is respectively connected to the driving voltage output by the detecting circuit and the sensing channel of the detecting circuit, and the first sensing unit is connected to the ground;
or,
wherein the first sensing unit is directly opposite to the second sensing unit, the capacitance value of the first sensing unit is a mutual capacitance value between the first sensing unit and the second sensing unit, and the capacitance value of the second sensing unit is a mutual capacitance value between the second sensing unit and the first sensing unit wherein the detecting circuit further comprises a changeover switch, wherein the changeover switch is configured to perform an alternate switching between a third state and a fourth state of the state of the sensing module; wherein the third state is that the first sensing unit is connected to a driving voltage output by the detecting circuit, and the second sensing unit is connected to a sensing channel of the detecting circuit; wherein the fourth state is that the second sensing unit is connected to the driving voltage output by the detecting circuit, and the first sensing unit is connected to the sensing channel of the detecting circuit.