US 11,671,067 B2
Piezoelectric acoustic resonator manufactured with piezoelectric thin film transfer process
Dae Ho Kim, Cornelius, NC (US); Mary Winters, Webster, NY (US); Ramakrishna Vetury, Charlotte, NC (US); and Jeffrey B. Shealy, Cornelius, NC (US)
Assigned to Akoustis, Inc., Huntersville, NC (US)
Filed by Akoustis, Inc., Huntersville, NC (US)
Filed on Mar. 18, 2020, as Appl. No. 16/822,689.
Application 16/822,689 is a continuation of application No. 16/433,849, filed on Jun. 6, 2019, granted, now 11,070,184.
Application 16/433,849 is a continuation of application No. 15/784,919, filed on Oct. 16, 2017, granted, now 10,355,659, issued on Jul. 16, 2019.
Application 15/784,919 is a continuation in part of application No. 15/068,510, filed on Mar. 11, 2016, granted, now 10,217,930, issued on Feb. 26, 2019.
Prior Publication US 2020/0220514 A1, Jul. 9, 2020
Int. Cl. H01L 41/047 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/10 (2006.01); H03H 9/05 (2006.01); H01L 41/337 (2013.01); H01L 41/317 (2013.01); H01L 41/29 (2013.01); H01L 41/23 (2013.01); H01L 41/18 (2006.01); H01L 41/08 (2006.01); H01L 41/053 (2006.01); H03H 9/54 (2006.01); H01L 41/312 (2013.01)
CPC H03H 3/02 (2013.01) [H01L 41/0475 (2013.01); H01L 41/0477 (2013.01); H01L 41/053 (2013.01); H01L 41/081 (2013.01); H01L 41/18 (2013.01); H01L 41/23 (2013.01); H01L 41/29 (2013.01); H01L 41/317 (2013.01); H01L 41/337 (2013.01); H03H 9/02015 (2013.01); H03H 9/02118 (2013.01); H03H 9/0523 (2013.01); H03H 9/105 (2013.01); H03H 9/13 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/177 (2013.01); H03H 9/547 (2013.01); H01L 41/0805 (2013.01); H01L 41/312 (2013.01); H03H 2003/021 (2013.01); H03H 2003/025 (2013.01); Y10T 29/42 (2015.01)] 11 Claims
OG exemplary drawing
 
1. An acoustic resonator device comprising:
a bond substrate;
a bonding support layer overlying the bond substrate;
a support layer overlying the bonding support layer, the support layer having an air cavity;
a first electrode overlying the air cavity and a portion of the support layer, the first electrode being recessed in the support layer;
a first passivation layer overlying the support layer and being physically coupled to the first electrode;
a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;
a second electrode formed overlying the piezoelectric film;
a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via;
a first contact metal formed overlying a portion of the second electrode and the piezoelectric film;
a second contact metal formed overlying a portion of the top metal and the piezoelectric film; and
a second passivation layer formed overlying the piezoelectric film, the second electrode, and the top metal.