CPC H03H 3/02 (2013.01) [H01L 41/0475 (2013.01); H01L 41/0477 (2013.01); H01L 41/053 (2013.01); H01L 41/081 (2013.01); H01L 41/18 (2013.01); H01L 41/23 (2013.01); H01L 41/29 (2013.01); H01L 41/317 (2013.01); H01L 41/337 (2013.01); H03H 9/02015 (2013.01); H03H 9/02118 (2013.01); H03H 9/0523 (2013.01); H03H 9/105 (2013.01); H03H 9/13 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/177 (2013.01); H03H 9/547 (2013.01); H01L 41/0805 (2013.01); H01L 41/312 (2013.01); H03H 2003/021 (2013.01); H03H 2003/025 (2013.01); Y10T 29/42 (2015.01)] | 11 Claims |
1. An acoustic resonator device comprising:
a bond substrate;
a bonding support layer overlying the bond substrate;
a support layer overlying the bonding support layer, the support layer having an air cavity;
a first electrode overlying the air cavity and a portion of the support layer, the first electrode being recessed in the support layer;
a first passivation layer overlying the support layer and being physically coupled to the first electrode;
a piezoelectric film overlying the support layer, the first electrode, and the air cavity, the piezoelectric film having an electrode contact via;
a second electrode formed overlying the piezoelectric film;
a top metal formed overlying the piezoelectric film, the top metal being physically coupled to the first electrode through the electrode contact via;
a first contact metal formed overlying a portion of the second electrode and the piezoelectric film;
a second contact metal formed overlying a portion of the top metal and the piezoelectric film; and
a second passivation layer formed overlying the piezoelectric film, the second electrode, and the top metal.
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