US 11,670,736 B2
Semiconductor light-emitting device including buffer structure
Jaiwon Jean, Seoul (KR); Joongseo Kang, Seoul (KR); Namsung Kim, Hwaseong-si (KR); and Daemyung Chun, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 13, 2022, as Appl. No. 17/964,957.
Application 17/964,957 is a division of application No. 17/117,298, filed on Dec. 10, 2020, granted, now 11,502,221.
Claims priority of application No. 10-2020-0062653 (KR), filed on May 25, 2020.
Prior Publication US 2023/0030530 A1, Feb. 2, 2023
Int. Cl. H01L 33/22 (2010.01); H01L 33/12 (2010.01); H01L 27/15 (2006.01); H01L 33/32 (2010.01); H01L 33/44 (2010.01); H01L 33/38 (2010.01)
CPC H01L 33/12 (2013.01) [H01L 27/156 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/382 (2013.01); H01L 33/44 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A semiconductor light-emitting device comprising:
a partition wall structure having an opening; and
a light-emitting structure comprising a buffer structure, an undoped semiconductor layer, a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, which are stacked on the partition wall structure,
wherein the light-emitting structure further comprises a trench, which passes through the buffer structure and overlaps the opening of the partition wall structure,
wherein the buffer structure comprises a nucleation layer, a dislocation-removing structure, and a buffer layer, which are stacked on the partition wall structure,
wherein the dislocation-removing structure comprises a first material layer on the nucleation layer and a second material layer on the first material layer, the second material layer having a lattice constant different from a lattice constant of the first material layer, and
wherein a roughness of a surface of the first material layer in contact with the second material layer is higher than a roughness of a surface of the nucleation layer in contact with the first material layer and a roughness of a surface of the second material layer in contact with the buffer layer.