US 11,670,732 B2
High sensitivity semiconductor device for detecting fluid chemical species and related manufacturing method
Massimo Cataldo Mazzillo, Corato (IT); and Giovanni Condorelli, Catania (IT)
Assigned to STMICROELECTRONICS S.R.L., Agrate Brianza (IT)
Filed by STMICROELECTRONICS S.R.L., Agrate Brianza (IT)
Filed on Sep. 1, 2021, as Appl. No. 17/464,299.
Application 17/464,299 is a division of application No. 16/386,184, filed on Apr. 16, 2019, granted, now 11,139,411.
Claims priority of application No. 102018000004620 (IT), filed on Apr. 17, 2018.
Prior Publication US 2021/0399156 A1, Dec. 23, 2021
Int. Cl. H01L 31/107 (2006.01); H01L 31/18 (2006.01); G01N 21/75 (2006.01); H01L 27/146 (2006.01)
CPC H01L 31/1075 (2013.01) [G01N 21/75 (2013.01); H01L 27/14643 (2013.01); H01L 31/18 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for manufacturing a device for detecting a chemical species, comprising:
forming a Geiger-mode avalanche diode in a body of semiconductor material delimited by a front surface, wherein forming the Geiger-mode avalanche diode includes:
forming a cathode region having a first type of conductivity in the body and extending from the front surface; and
forming an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface;
forming, on the anode region, a sensitive structure that includes a sensitive region, said sensitive region having an electrical permittivity that depends upon a concentration of said chemical species, a portion of the sensitive region directly overlying the anode region; and
forming, on the sensitive structure, a resistive region electrically coupled to the anode region.