CPC H01L 31/107 (2013.01) [H01L 31/022416 (2013.01); H01L 31/18 (2013.01)] | 24 Claims |
1. An avalanche photodiode for detecting ultraviolet radiation, comprising:
a semiconductor body having a front surface and including:
a silicon carbide substrate having a first type of conductivity;
a first epitaxial layer including silicon carbide and positioned on the silicon carbide substrate;
a second epitaxial layer including silicon carbide, positioned on the first epitaxial layer, and having the first type of conductivity, at least a portion of the second epitaxial layer being a cathode region; and
a third epitaxial layer including silicon carbide and positioned on the second epitaxial layer;
an anode region extending completely through the third epitaxial layer and having a second type of conductivity; and
a guard ring having the second type of conductivity, which extends into the semiconductor body starting from the front surface and completely laterally surrounds the anode region.
|