US 11,670,730 B2
Avalanche photodiode for detecting ultraviolet radiation and manufacturing method thereof
Massimo Cataldo Mazzillo, Corato (IT); Antonella Sciuto, S. Giovanni la Punta (IT); and Dario Sutera, San Gregorio di Catania (IT)
Assigned to STMICROELECTRONICS S.R.L., Agrate Brianza (IT)
Filed by STMICROELECTRONICS S.R.L., Agrate Brianza (IT)
Filed on Sep. 17, 2019, as Appl. No. 16/573,941.
Application 16/573,941 is a continuation of application No. 15/140,880, filed on Apr. 28, 2016, granted, now 10,461,209.
Claims priority of application No. 102015000058764 (IT), filed on Oct. 6, 2015.
Prior Publication US 2020/0013915 A1, Jan. 9, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 31/107 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/107 (2013.01) [H01L 31/022416 (2013.01); H01L 31/18 (2013.01)] 24 Claims
OG exemplary drawing
 
1. An avalanche photodiode for detecting ultraviolet radiation, comprising:
a semiconductor body having a front surface and including:
a silicon carbide substrate having a first type of conductivity;
a first epitaxial layer including silicon carbide and positioned on the silicon carbide substrate;
a second epitaxial layer including silicon carbide, positioned on the first epitaxial layer, and having the first type of conductivity, at least a portion of the second epitaxial layer being a cathode region; and
a third epitaxial layer including silicon carbide and positioned on the second epitaxial layer;
an anode region extending completely through the third epitaxial layer and having a second type of conductivity; and
a guard ring having the second type of conductivity, which extends into the semiconductor body starting from the front surface and completely laterally surrounds the anode region.