US 11,670,712 B2
Semiconductor device structure and method for manufacturing the same
Zhongping Liao, Hangzhou (CN)
Assigned to Silergy Semiconductor Technology (Hangzhou) LTD, Hangzhou (CN)
Filed by Silergy Semiconductor Technology (Hangzhou) LTD, Hangzhou (CN)
Filed on Jul. 2, 2021, as Appl. No. 17/366,439.
Application 17/366,439 is a continuation of application No. 14/864,340, filed on Sep. 24, 2015, granted, now 11,088,274.
Claims priority of application No. 201410578050.8 (CN), filed on Oct. 24, 2014.
Prior Publication US 2021/0336053 A1, Oct. 28, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/739 (2006.01)
CPC H01L 29/7813 (2013.01) [H01L 29/0634 (2013.01); H01L 29/0878 (2013.01); H01L 29/407 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7802 (2013.01); H01L 29/1095 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a) a first semiconductor layer having dopants of a first type;
b) a second semiconductor layer having said dopants of said first type on said first semiconductor layer, wherein said second semiconductor layer is lightly-doped relative to said first semiconductor layer;
c) first column regions located in said second semiconductor layer;
d) a second column region located in said second semiconductor layer, wherein said second column region is at least arranged between two of said first column regions; and
e) a first sub-column region and a second sub-column region laterally arranged in said second column region, wherein a doping concentration of said first sub-column region decreases in a first lateral direction from a first of said two of said first column regions to said second sub-column region, and wherein a doping concentration of said second sub-column region decreases in a second lateral direction from a second of said two of said first column regions to said first sub-column region, wherein said first sub-column region and said second sub-column region have a same dopant type and together laterally extend a full distance between said two of said first column regions in order to increase a breakdown voltage and decrease an on-resistance, wherein said first sub-column region and said second sub-column region are heavily-doped relative to said second semiconductor layer, and wherein each of said first sub-column region and said second sub-column region extends from a top surface of said second semiconductor layer to a full depth of said first column regions.