CPC H01L 29/7606 (2013.01) [H01L 21/02521 (2013.01); H01L 21/02527 (2013.01); H01L 21/02568 (2013.01); H01L 27/10808 (2013.01); H01L 27/10855 (2013.01); H01L 27/10873 (2013.01); H01L 27/10897 (2013.01); H01L 27/11507 (2013.01); H01L 27/11509 (2013.01); H01L 29/1606 (2013.01); H01L 29/26 (2013.01); H01L 29/66045 (2013.01); H01L 29/66969 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01)] | 20 Claims |
1. A method of forming an integrated assembly, comprising:
forming a first construction having first conductive structures extending along a first direction and spaced from one another along a second direction; intervening first insulative regions being between the spaced-apart first conductive structures; the first conductive structures comprising first conductive material;
forming first insulative material over the first construction;
forming a second construction over the first insulative material; the second construction having second conductive structures extending along the second direction and spaced from one another along the first direction; intervening second insulative regions being between the spaced-apart second conductive structures; the second construction including second insulative material over the second conductive structures;
forming openings extending through the second insulative material, the second conductive structures, and the first insulative material; the openings extending to the first conductive structures; the second conductive structures comprising second conductive material; gating structures comprising regions of the second conductive material adjacent the openings;
lining the openings with dielectric material to narrow the openings;
forming two-dimensional-material to extend along an upper surface of the second insulative material, and to extend into the narrowed openings;
patterning the two-dimensional-material into segments; each of the segments including a container-shape which extends into an associated one of the openings; each of the container-shapes including a bottom region adjacent the first conductive material, a ring-shaped sidewall region extending upwardly from the bottom region, and a ledge region extending outwardly from the sidewall region; the ledge regions being over the second insulative material; the container-shapes including upper source/drain regions, lower source/drain regions, and channel regions between the upper and lower source/drain regions; the channel regions being operatively proximate the gating structures; and
forming storage elements over the segments and electrically coupled with the upper source/drain regions.
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