US 11,670,707 B2
Integrated assemblies and methods of forming integrated assemblies
David K. Hwang, Boise, ID (US); John F. Kaeding, Boise, ID (US); Richard J. Hill, Boise, ID (US); and Scott E. Sills, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jun. 14, 2022, as Appl. No. 17/840,250.
Application 17/840,250 is a division of application No. 17/035,542, filed on Sep. 28, 2020, granted, now 11,393,920.
Prior Publication US 2022/0310831 A1, Sep. 29, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 29/76 (2006.01); H01L 29/66 (2006.01); H01L 27/11509 (2017.01); H01L 27/108 (2006.01); H01L 29/16 (2006.01); H01L 29/26 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 27/11507 (2017.01)
CPC H01L 29/7606 (2013.01) [H01L 21/02521 (2013.01); H01L 21/02527 (2013.01); H01L 21/02568 (2013.01); H01L 27/10808 (2013.01); H01L 27/10855 (2013.01); H01L 27/10873 (2013.01); H01L 27/10897 (2013.01); H01L 27/11507 (2013.01); H01L 27/11509 (2013.01); H01L 29/1606 (2013.01); H01L 29/26 (2013.01); H01L 29/66045 (2013.01); H01L 29/66969 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming an integrated assembly, comprising:
forming a first construction having first conductive structures extending along a first direction and spaced from one another along a second direction; intervening first insulative regions being between the spaced-apart first conductive structures; the first conductive structures comprising first conductive material;
forming first insulative material over the first construction;
forming a second construction over the first insulative material; the second construction having second conductive structures extending along the second direction and spaced from one another along the first direction; intervening second insulative regions being between the spaced-apart second conductive structures; the second construction including second insulative material over the second conductive structures;
forming openings extending through the second insulative material, the second conductive structures, and the first insulative material; the openings extending to the first conductive structures; the second conductive structures comprising second conductive material; gating structures comprising regions of the second conductive material adjacent the openings;
lining the openings with dielectric material to narrow the openings;
forming two-dimensional-material to extend along an upper surface of the second insulative material, and to extend into the narrowed openings;
patterning the two-dimensional-material into segments; each of the segments including a container-shape which extends into an associated one of the openings; each of the container-shapes including a bottom region adjacent the first conductive material, a ring-shaped sidewall region extending upwardly from the bottom region, and a ledge region extending outwardly from the sidewall region; the ledge regions being over the second insulative material; the container-shapes including upper source/drain regions, lower source/drain regions, and channel regions between the upper and lower source/drain regions; the channel regions being operatively proximate the gating structures; and
forming storage elements over the segments and electrically coupled with the upper source/drain regions.