US 11,670,706 B2
Methods of manufacture for trench-gate insulated-gate bipolar transistors (IGBTs)
Meng-Chia Lee, Chubbuck, ID (US); Ralph N. Wall, Pocatello, ID (US); Mingjiao Liu, Gilbert, AZ (US); Shamsul Arefin Khan, Chandler, AZ (US); and Gordon M. Grivna, Mesa, AZ (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Jul. 17, 2020, as Appl. No. 16/947,085.
Application 16/947,085 is a continuation of application No. 15/884,773, filed on Jan. 31, 2018, granted, now 10,727,326.
Claims priority of provisional application 62/548,361, filed on Aug. 21, 2017.
Prior Publication US 2020/0350424 A1, Nov. 5, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01)
CPC H01L 29/7397 (2013.01) [H01L 29/0623 (2013.01); H01L 29/0649 (2013.01); H01L 29/0661 (2013.01); H01L 29/0696 (2013.01); H01L 29/083 (2013.01); H01L 29/401 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/42376 (2013.01); H01L 29/66348 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming, in a substrate, a termination region of an insulated-gate bipolar transistor (IGBT) device, the termination region being included in an inactive region of the IGBT device, the inactive region at least partially surrounding an active region of the IGBT device;
forming a trench in the substrate, the trench extending along a longitudinal axis in the active region of the IGBT device, the trench having:
a first sidewall included in a first mesa disposed in the active region of the IGBT device; and
a second sidewall included in a second mesa disposed in the active region of the IGBT device, the first mesa and the second mesa being parallel with the trench;
forming, in at least a portion of the first mesa in the active region of the IGBT device, an active segment of the IGBT device; and
forming, in at least a portion of the second mesa in the active region of the IGBT device, an inactive segment of the IGBT device, the inactive segment being defined by a dielectric material.