US 11,670,693 B2
Trench gate field-effect transistors with drain runner
Mitsuru Soma, Higashimatsuyama (JP)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Jan. 28, 2021, as Appl. No. 17/248,512.
Prior Publication US 2022/0238664 A1, Jul. 28, 2022
Int. Cl. H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/765 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/41741 (2013.01) [H01L 21/26513 (2013.01); H01L 21/765 (2013.01); H01L 29/407 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A field-effect transistor (FET) comprising:
a semiconductor region;
a trench disposed in the semiconductor region;
a trench gate disposed in an upper portion of the trench in an active region of the FET;
a conductive runner disposed in a bottom portion of the trench, the conductive runner being electrically coupled with a drain terminal of the FET via an ohmic contact with a heavily doped implant, a portion of the conductive runner being disposed in the active region below the trench gate; and
a dielectric layer disposed in the trench between trench gate and the conductive runner.