US 11,670,688 B2
Semiconductor apparatus
Tokiyoshi Matsuda, Kyoto (JP); Masahiro Sugimoto, Kyoto (JP); and Takashi Shinohe, Kyoto (JP)
Assigned to FLOSFIA INC., Kyoto (JP)
Appl. No. 16/764,615
Filed by FLOSFIA INC., Kyoto (JP)
PCT Filed Nov. 15, 2018, PCT No. PCT/JP2018/042347
§ 371(c)(1), (2) Date May 15, 2020,
PCT Pub. No. WO2019/098296, PCT Pub. Date May 23, 2019.
Claims priority of application No. JP2017-219761 (JP), filed on Nov. 15, 2017.
Prior Publication US 2020/0395450 A1, Dec. 17, 2020
Int. Cl. H01L 29/24 (2006.01); C23C 16/448 (2006.01); H01L 21/02 (2006.01); H01L 21/443 (2006.01); H01L 21/465 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H02M 3/335 (2006.01)
CPC H01L 29/24 (2013.01) [C23C 16/4481 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 21/443 (2013.01); H01L 21/465 (2013.01); H01L 29/66969 (2013.01); H01L 29/7397 (2013.01); H01L 29/7806 (2013.01); H01L 29/7813 (2013.01); H02M 3/33576 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor apparatus comprising:
a gate electrode;
an n type semiconductor layer including an oxide semiconductor as a major component, the oxide semiconductor containing a Group 13 metal of the periodic table; and
a channel layer formed of a channel directly or through other layers on a side wall of the gate electrode,
wherein a portion of or whole of the channel layer includes a p type oxide semiconductor,
wherein the p type oxide semiconductor includes a crystal of a metal oxide containing iridium or a mixed crystal of the metal oxide containing iridium.