US 11,670,684 B2
Semiconductor transistor device and method of manufacturing the same
Li Juin Yip, Villach (AT); Oliver Blank, Villach (AT); Heimo Hofer, Bodensdorf (AT); Michael Hutzler, Villach (AT); and Ralf Siemieniec, Villach (AT)
Assigned to Infineon Technologies Austria AG, Villach (AT)
Filed by Infineon Technologies Austria AG, Villach (AT)
Filed on Feb. 1, 2021, as Appl. No. 17/163,780.
Claims priority of application No. 20156150 (EP), filed on Feb. 7, 2020.
Prior Publication US 2021/0249510 A1, Aug. 12, 2021
Int. Cl. H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/1087 (2013.01) [H01L 29/1095 (2013.01); H01L 29/66712 (2013.01); H01L 29/7802 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor transistor device, comprising:
a source region;
a body region comprising a channel region extending in a vertical direction;
a drain region;
a gate region arranged aside the channel region in a lateral direction; and
a body contact region made of an electrically conductive material,
wherein the body contact region forms a body contact area,
wherein the body contact region is in electrical contact with the body region via the body contact area,
wherein the body contact area is tilted with respect to the vertical direction and the lateral direction,
wherein the body contact area has a concave shape in a vertical cross-section of the semiconductor transistor device.