US 11,670,673 B2
Semiconductor device
Hyun-suk Lee, Hwaseong-si (KR); Ji-won Yu, Yongin-si (KR); and Ji-woon Park, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 13, 2021, as Appl. No. 17/147,542.
Application 17/147,542 is a continuation of application No. 16/508,695, filed on Jul. 11, 2019, granted, now 10,903,308.
Application 16/508,695 is a continuation in part of application No. 15/448,683, filed on Mar. 3, 2017, granted, now 10,355,073, issued on Jul. 16, 2019.
Claims priority of application No. 10-2016-0088706 (KR), filed on Jul. 13, 2016.
Prior Publication US 2021/0159310 A1, May 27, 2021
Int. Cl. H01L 49/02 (2006.01); H01L 27/108 (2006.01); H01L 27/10 (2006.01)
CPC H01L 28/75 (2013.01) [H01L 27/101 (2013.01); H01L 27/10805 (2013.01); H01L 27/10808 (2013.01); H01L 27/10811 (2013.01); H01L 27/10814 (2013.01); H01L 27/10847 (2013.01); H01L 27/10852 (2013.01); H01L 27/10855 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a lower electrode structure disposed on the substrate;
a dielectric layer disposed on the lower electrode structure; and
an upper electrode structure disposed on the dielectric layer,
wherein:
the lower electrode structure comprises:
a first lower electrode pattern having a first recess;
a second lower electrode pattern disposed in the first recess of the first lower electrode pattern and having a second recess; and
a third lower electrode pattern fully filling the second recess of the second lower electrode pattern,
the first lower electrode pattern is cylinder-shaped,
the second lower electrode pattern is cylinder-shaped, and
the dielectric layer contacts the first lower electrode pattern, the second lower electrode pattern and the third lower electrode pattern.